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Referinta: GP-GSM2NE3512GNTD 3
Marca: GIGABYTE
GIGABYTE SSD M.2 PCIe 512GB
SSD GIGABYTE 512 GB, M.2 internal SSD, Form Factor 2280, PCI-Express 3.0 x4, NVMe 1.3, rata transfer r/w: 1700/1550 MB/s, IOPS r/w: 270K/340K
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Intel SSD 665p Series (1.0TB, M.2 80mm PCIe 3.0 x4, 3D3, QLC) Retail Box Single Pack
Locatia dispozitivuluiInternalFactor de formaM.2 (2280)Capacitate de stocare1 TBSuporta canal de datePCI Express 3.0 x4Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellMaximum Random Read Rate160000 IOPSMaximum Random Write Ra
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Descriere
| Locatia dispozitivului | Internal |
| Factor de forma | M.2 (2280) |
| Capacitate de stocare | 1 TB |
| Suporta canal de date | PCI Express 3.0 x4 |
| Tehnologia pentru memorie | NAND Flash |
| Flash Memory Cell Technology | Quad-Level Cell |
| Maximum Random Read Rate | 160000 IOPS |
| Maximum Random Write Rate | 250000 IOPS |
| Maximum Sequential Read Rate | 2000 MB/s |
| Maximum Sequential Write Rate | 1925 MB/s |
| Total Bytes Written (TBW) | 300 TB |
| Erori nereparabile | 1 per 10^15 |
| Timpul presupus intre caderi | 1600000 h |
| Solid State Drive Features | AES 256-bit Encryption End-to-End Data Protection Intel Rapid Start Technology Intel Smart Response Technology |
| Consumul maxim de putere | 0.1 W |
| Consumul minim de putere | 0.04 W |
| Temperatura maxima de operare a mediului ambiant | 70 °C |
| Temperatura ambientala minima de operare | 0 °C |
| Adancime | 80 mm |
| Inaltime | 22 mm |
| Greutate nominala | 0.01 kg |
| Produse returnabile aflate in garantie | Yes |
| Termen de garantie | 60 luni |
| Criterii de validare a garantiei | Serial Number |
| Greutatea bruta a pachetului | 0.1 kg |
| Greutatea neta a pachetului | 0.1 kg |
| Bucati in pachet | 1 |
| Greutatea bruta a cutiei | 0.1 kg |
| Pachete (colete) in cutie | 1 |
| Tip pachet | Box |
| EAN Code | 5032037160506 |
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Locatia dispozitivuluiInternalFactor de formaM.2 (2280)Capacitate de stocare1 TBSuporta canal de datePCI Express 3.0 x4Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellMaximum Random Read Rate160000 IOPSMaximum Random Write Ra