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Referinta: MZ-77E500BW 3
Marca: SAMSUNG
SM SSD 500GB 870 EVO SATA3 MZ-77E500BW
SSD Samsung, 870 EVO, 2.5, 500GB, reads/writes 560MB/S/530MB/S
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Kingston 1000GB KC2500 M.2 2280 NVMe SSD, up to 3500/2900MB/s, EAN: 740617307184
Locatia dispozitivuluiInternalFactor de formaM.2Capacitate de stocare1 TBSuporta canal de datePCIe NVMe 3.0 x4Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate375000 IOPSMaximum Random Write Rate30000
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Descriere
| Locatia dispozitivului | Internal |
| Factor de forma | M.2 |
| Capacitate de stocare | 1 TB |
| Suporta canal de date | PCIe NVMe 3.0 x4 |
| Tehnologia pentru memorie | NAND Flash |
| Flash Memory Cell Technology | Triple-Level Cell |
| Maximum Random Read Rate | 375000 IOPS |
| Maximum Random Write Rate | 300000 IOPS |
| Maximum Sequential Read Rate | 3500 MB/s |
| Maximum Sequential Write Rate | 2900 MB/s |
| Total Bytes Written (TBW) | 600 TB |
| Timpul presupus intre caderi | 2000000 h |
| Solid State Drive Features | AES 256-bit Encryption |
| Toleranta la vibratii in operare | 2.17G @ 7-800Hz |
| Toleranta la vibratii stocare | 20G @ 20-1000Hz |
| Consumul maxim de putere | 7 W |
| Consumul minim de putere | 0.003 W |
| Temperatura maxima de operare a mediului ambiant | 70 °C |
| Temperatura ambientala minima de operare | 0 °C |
| Temp ambientala maxima pentru non operare | 85 °C |
| Temp ambientala minima pentru non operare | -40 °C |
| Adancime | 22 mm |
| Inaltime | 3.5 mm |
| Latime | 80 mm |
| Greutate nominala | 8 g |
| Produse returnabile aflate in garantie | Yes |
| Termen de garantie | 60 month(s) |
| Criterii de validare a garantiei | Serial Number |
| Greutatea bruta a pachetului | 0.1 kg |
| Greutatea neta a pachetului | 0 kg |
| Bucati in pachet | 1 |
| Greutatea bruta a cutiei | 0.1 kg |
| Retail Packaging Net Weight Carton | 0 kg |
| Retail Packaging Net Weight Plastic | 0 kg |
| Pachete (colete) in cutie | 1 |
| Tip pachet | Retail |
| EAN Code | 740617307184 |
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Locatia dispozitivuluiInternalFactor de formaM.2Capacitate de stocare1 TBSuporta canal de datePCIe NVMe 3.0 x4Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate375000 IOPSMaximum Random Write Rate30000